Impurity Distribution after Solidification of Hypereutectic Al-Si Melts and Eutectic Al-Si Melt

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental i...

متن کامل

Removal of phosphorus by the solidification refining with Si–Al melts

To discuss the possibility of phosphorus removal from silicon by the solidification refining with Si–Al melts, the distribution of phosphorus between solid silicon and the liquid Si–Al alloy at 1173–1373 K was investigated. In the present study, the distribution of phosphorus was examined by the temperature gradient zone melting method, where a phosphorus containing molten Si–Al zone was passed...

متن کامل

Study of Heterogeneous Nucleation of Eutectic Si in High-Purity Al-Si Alloys with Sr Addition

Al-5 wt pct Si master-alloys with controlled Sr and/or P addition/s were produced using super purity Al 99.99 wt pct and Si 99.999 wt pct materials in an arc melter. The master-alloy was melt-spun resulting in the production of thin ribbons. The Al matrix of the ribbons contained entrained Al-Si eutectic droplets that were subsequently investigated. Differential scanning calorimetry, thermodyna...

متن کامل

The roles of Eu during the growth of eutectic Si in Al-Si alloys

Controlling the growth of eutectic Si and thereby modifying the eutectic Si from flake-like to fibrous is a key factor in improving the properties of Al-Si alloys. To date, it is generally accepted that the impurity-induced twinning (IIT) mechanism and the twin plane re-entrant edge (TPRE) mechanism as well as poisoning of the TPRE mechanism are valid under certain conditions. However, IIT, TPR...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: High Temperature Materials and Processes

سال: 2018

ISSN: 2191-0324,0334-6455

DOI: 10.1515/htmp-2018-0117